Pehi-Pake IGBT
Pēhi-Pēhi IGBT (IEGT)
| MOMO | VDRM V | VRRM V | IT(AV)@80℃ A | ITGQM@CS A / µF | ITSM@10ms kA | VTM V | VTO V | rT mΩ | TVJM ℃ | Rthjc ℃/W | |
| CSG07E1400 | 1400 | 100 | 250 | 700 | 2 | 4 | ≤2.2 | ≤1.20 | ≤0.50 | 125 | 0.075 |
| CSG07E1700 | 1700 | 16 | 240 | 700 | 1.5 | 4 | ≤2.5 | ≤1.20 | ≤0.50 | 125 | 0.075 |
| CSG15F2500 | 2500 | 17 | 570 | 1500 | 3 | 10 | ≤2.8 | ≤1.50 | ≤0.90 | 125 | 0.027 |
| CSG20H2500 | 2500 | 17 | 830 | 2000 | 6 | 16 | ≤2.8 | ≤1.66 | ≤0.57 | 125 | 0.017 |
| CSG25H2500 | 2500 | 16 | 867 | 2500 | 6 | 18 | ≤3.1 | ≤1.66 | ≤0.57 | 125 | 0.017 |
| CSG30J2500 | 2500 | 17 | 1350 | 3000 | 5 | 30 | ≤2.5 | ≤1.50 | ≤0.33 | 125 | 0.012 |
| CSG10F2500 | 2500 | 15 | 830 | 1000 | 2 | 12 | ≤2.5 | ≤1.66 | ≤0.57 | 125 | 0.017 |
| CSG06D4500 | 4500 | 17 | 210 | 600 | 1 | 3.1 | ≤4.0 | ≤1.90 | ≤0.50 | 125 | 0.05 |
| CSG10F4500 | 4500 | 16 | 320 | 1000 | 1 | 7 | ≤3.5 | 1.9 | ≤0.35 | 125 | 0.03 |
| CSG20H4500 | 4500 | 16 | 745 | 2000 | 2 | 16 | ≤3.2 | ≤1.8 | ≤0.85 | 125 | 0.017 |
| CSG30J4500 | 4500 | 16 | 870 | 3000 | 6 | 16 | ≤4.0 | ≤2.2 | ≤0.60 | 125 | 0.012 |
| CSG40L4500 | 4500 | 16 | 1180 | 4000 | 3 | 20 | ≤4.0 | ≤2.1 | ≤0.58 | 125 | 0.011 |
Tuhipoka:D- me te dwahanga iode, A-kahore he wahanga diode
Ko te tikanga, i whakamahia nga waahanga IGBT whakapiri i roto i te taputapu whakawhiti o te punaha whakawhiti DC ngawari.Ko te kohinga kōwae he tohanga wera taha kotahi.He iti te kaha o te taputapu me te kore e tika ki te hono i roto i nga raupapa, he kino te ora i roto i te hau tote, he ngoikore te wiri anti-shock, te ngenge waiariki ranei.
Ko te momo hou press-contact high-power press-pack IGBT device e kore anake e whakaoti i nga raruraru o te waatea i roto i te tukanga whakapiri, te ngenge waiariki o nga rauemi whakapiri me te iti o te kaha o te wera o te taha kotahi engari ka whakakorea ano hoki te aukati wera i waenga i nga momo waahanga, whakaitihia te rahi me te taumaha.Na ka tino whakapai ake i te pai o te mahi me te pono o te taputapu IGBT.He mea tino pai ki te whakatutuki i te mana teitei, te ngaohiko teitei, me te pono o te punaha whakawhiti DC ngawari.
He mea nui te whakakapi i te momo whakapiri konuhono ma te pehi-pake IGBT.
Mai i te tau 2010, i whakawhänuihia a Runau Electronics ki te hanga taputapu IGBT momo pehi-pakeha hou me te angitu i te whakaputanga i te tau 2013. I whakamanahia te mahinga e te tohu a-motu, a, kua oti te whakatutukitanga.
Inaianei ka taea e matou te hanga me te whakarato i nga raupapa press-pack IGBT o te awhe IC i te 600A ki te 3000A me te awhe VCES i te 1700V ki te 6500V.Ko te tirohanga pai mo te IGBT perehi-putea i hangaia i Haina kia whakamahia ki Haina te punaha whakawhiti DC ngawari e tino tumanakohia ana ka waiho hei kohatu maero o te ao mo te umanga hikohiko hiko o Haina i muri i te tereina hiko tereina.
Whakataki Poto o te Aratau Angamaheni:
1. Aratau: Press-pack IGBT CSG07E1700
●Ko nga ahuatanga o te hiko i muri i te takai me te pehi
● Whakamuriwhakararahonodiode whakaora tereka mutu
● Tawhā:
Uara Whakatau（25℃）
a.Ngaohiko Kaihiko: VGES=1700（V）
b.Ngaohiko Kaituku Kuaha: VCES=±20（V）
c.Kohikohi Naianei: IC=800（A）ICP=1600（A）
d.Te Tohanga Mana Kaikohi: PC=4440（W）
e.Te Wehenga Huinga Mahi: Tj=－20~125℃
f.Paemahana Rokiroki: Tstg=－40~125℃
Kua tohuhia: ka pakaru te taputapu mena kei tua atu i te uara kua tohua
HikoCharacteristics, TC＝125℃，Rth (ātete waiariki ohononga kitake）kaore i whakauruhia
a.Te Ritenga o te Keeti: IGES=±5（μA）
b.Kohikohi Emitter Ārai ICES nāianei=250（mA）
c.Ngaohiko Whakakohikohi Kaipupuri: VCE(sat)=6(V)
d.Ngaohiko Paerewa Kaituku Keeti: VGE(th)=10(V)
e.Wā whakakā: Ton=2.5μs
f.Whakawetohia te wa: Toff=3μs
2. Aratau: Press-pack IGBT CSG10F2500
●Ko nga ahuatanga o te hiko i muri i te takai me te pehi
● Whakamuriwhakararahonodiode whakaora tereka mutu
● Tawhā:
Uara Whakatau（25℃）
a.Ngaohiko Kaihiko: VGES=2500（V）
b.Ngaohiko Kaituku Kuaha: VCES=±20（V）
c.Kohikohi Naianei: IC=600（A）ICP=2000（A）
d.Tohanga Mana Kaikohi: PC=4800（W）
e.Te Wehenga Huinga Mahi: Tj=－40~125℃
f.Paemahana Rokiroki: Tstg=－40~125℃
Kua tohuhia: ka pakaru te taputapu mena kei tua atu i te uara kua tohua
HikoCharacteristics, TC＝125℃，Rth (ātete waiariki ohononga kitake）kaore i whakauruhia
a.Te Ritenga o te Keeti: IGES=±15（μA）
b.Kohikohi Emitter Ārai ICES nāianei=25（mA）
c.Ngaohiko Whakakohikohi Kaipupuri: VCE(sat)=3.2 (V)
d.Ngaohiko Paerewa Kaituku Keeti: VGE(th)=6.3(V)
e.Wā whakakā: Ton=3.2μs
f.Whakawetohia te wa: Toff=9.8μs
g.Ngaohiko Whakamua Diode: VF=3.2 V
h.Waa Whakaora Whakamuri Diode: Trr=1.0 μs
3. Aratau: Press-pack IGBT CSG10F4500
●Ko nga ahuatanga o te hiko i muri i te takai me te pehi
● Whakamuriwhakararahonodiode whakaora tereka mutu
● Tawhā:
Uara Whakatau（25℃）
a.Ngaohiko Kaihiko: VGES=4500（V）
b.Ngaohiko Kaituku Kuaha: VCES=±20（V）
c.Kohikohi Naianei: IC=600（A）ICP=2000（A）
d.Tohanga Mana Kaikohi: PC=7700（W）
e.Te Wehenga Huinga Mahi: Tj=－40~125℃
f.Paemahana Rokiroki: Tstg=－40~125℃
Kua tohuhia: ka pakaru te taputapu mena kei tua atu i te uara kua tohua
HikoCharacteristics, TC＝125℃，Rth (ātete waiariki ohononga kitake）kaore i whakauruhia
a.Te Ritenga o te Keeti: IGES=±15（μA）
b.Kohikohi Emitter Ārai ICES nāianei=50（mA）
c.Ngaohiko Whakakotahi Kaipupuri: VCE(sat)=3.9 (V)
d.Ngaohiko Paerewa Kaituku Keeti: VGE(th)=5.2 (V)
e.Wā whakakā: Ton=5.5μs
f.Whakawetohia te wa: Toff=5.5μs
g.Ngaohiko Whakamua Diode: VF=3.8 V
h.Waa Whakaora Whakamuri Diode: Trr=2.0 μs
Tuhipoka:He painga te IGBT mo te paanui mo te wa roa, he nui te aukati ki te kino me nga ahuatanga o te hanganga hono o te perehi, he pai ki te mahi i roto i nga taputapu raupapa, ka whakatauritea ki te thyristor GTO tuku iho, ko te IGBT te tikanga taraiwa-ngaohiko. .Na reira, he ngawari ki te whakahaere, he haumaru me te whanui o nga waahanga whakahaere.